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Growth Mechanisms During Homoepitaxial Growth of Silicon

By Johannes van Wingerden
Nov. 1999
Delft University Press
ISBN: 90-407-1871-7
110 p.
$48.50 Paper Original

Contents include: Introduction; Mechanism of the Step Flow to Island Growth Transition During MBE on Si(001)-2 x 1; Atomic Details of Step Flow Growth on Si(001); Room Temprature Growth of Submonolayers of Silicon on Si(001) Studied With STM; Interactions Between Adsorbed Si Dimers on Si(001); Origin of Rippled Structures Formed During Growth of Silicon on Si(001) With MBE; Growth Pyramids on Si(111) Facets: A CVD and MBE Study.